Boolean and elementary algebra with a roll-to-roll printed electrochemical memristor

0557281 - ÚMCH 2023 RIV US eng J - Journal Article
Grant, B. - Bandera, Y. - Foulger, S. H. - Vilčáková, J. - Sáha, P. - Pfleger, Jiří
Boolean and elementary algebra with a roll-to-roll printed electrochemical memristor.
Advanced Materials Technologies. Roč. 7, č. 5 (2022), č. článku 2101108. ISSN 2365-709X. E-ISSN 2365-709X
R&D Projects: GA MŠMT(CZ) LTAUSA19066
Institutional support: RVO:61389013
Keywords : conjugated polymer * low-power programming * S-PEDOT
OECD category: Polymer science
Impact factor: 6.8, year: 2022
Method of publishing: Limited access
https://onlinelibrary.wiley.com/doi/10.1002/admt.202101108

A non-volatile conjugated polymer-based electrochemical memristor (cPECM), derived from sodium 4-[(2,3-dihydrothieno[3,4-b][1,4]dioxin-2-yl)methoxy]butane-2-sulfonate (S-EDOT), is fabricated through roll-to-roll printing and exhibited neuromorphic properties. The 3-terminal device employed a “read” channel where conductivity of the water-soluble, self-doped S-PEDOT is equated to synaptic weight and was electrically decoupled from the programming electrode. For the model system, a +2500 mV programming pulse of 100 ms duration resulted in a 0.136 μS resolution in conductivity change, giving over 1000 distinct conductivity states for one cycle. The minimum programming power requirements of the cPECM was 0.31 pJ mm−2 and with advanced printing techniques, a 0.1 fJ requirement for a 20 μm device is achievable. The mathematical operations of addition, subtraction, multiplication, and division are demonstrated with a single cPECM, as well as the logic gates AND, OR, NAND, and NOR. This demonstration of a printed cPECM is the first step toward the implementation of a mass produced electrochemical memristor that combines information storage and processing and may allow for the realization of printable artificial neural networks.

Permanent Link: http://hdl.handle.net/11104/0331803