Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications

0556457 - FZÚ 2023 RIV US eng C - Conference Paper (international conference)
Volodin, V.A. - Krivyakin, G.K. - Bulgakov, Alexander - Levy, Yoann - Beránek, Jiří - Nagisetty, Siva S. - Bryknar, Z. - Bulgakova, Nadezhda M. - Geydt, P.V. - Popov, A. A.
Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications.
Proceedings of SPIE - The International Society for Optical Engineering. Bellingham: SPIE, 2022 - (Lukichev, V.; Rudenko, K.), č. článku 1215702. 12157. ISSN 0277-786X.
[International Conference on Micro- and Nano-Electronics /14./. Zvenigorod (RU), 04.10.2021-08.10.2021]
R&D Projects: GA MŠMT EF15_003/0000445; GA MŠMT EF15_006/0000674; GA MŠMT LO1602
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445; OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674
Institutional support: RVO:68378271
Keywords : Ge/Si multi-nanolayers * picosecond infrared pulsed laser annealing * Raman spectroscopy * nonlinear efffects in light absorption
OECD category: Optics (including laser optics and quantum optics)
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12157/2622731/Picosecond-infrared-laser-crystallization-of-Ge-layers-in-Ge-Si/10.1117/12.2622731.short

The processes involved in picosecond infrared pulsed laser annealing of multylayer structures consisting of alternating thin films of amorphous silicon and germanium were investigated. The films were fabricated by plasma-chemical deposition on Si(001) and glass substrates. An analysis of structural transformation of Ge/Si multi-nanolayers was performed using Raman spectroscopy. Regimes of annealing were found when the Ge layers are partially crystallized while the Si layers remain amorphous without noticeable intermixing of Ge and Si. The developed approach can be used for creation of GeSi solid alloys (which can be used in memristors on not refractive substrates) and also for creation of Si based p-i-n structures on non-refractory substrates with Ge nanoclusters in i-layer, that can enhance the efficiency of thin film solar cells.
Permanent Link: http://hdl.handle.net/11104/0330692