Towards an ideal high-κ HfO.sub.2./sub.–ZrO.sub.2./sub.-based dielectric

0556440 - FZÚ 2023 RIV GB eng J - Journal Article
Kashir, Alireza - Farahani, M.G. - Hwang, H.
Towards an ideal high-κ HfO₂–ZrO₂-based dielectric.
Nanoscale. Roč. 13, č. 32 (2021), s. 13631-13640. ISSN 2040-3364. E-ISSN 2040-3372
Institutional support: RVO:68378271
Keywords : dielectric properties of solids * electric fields * electronics industry * ferroelectric films * ferroelectricity * Hafnium oxides * Zirconia
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 8.307, year: 2021
Method of publishing: Limited access
https://doi.org

The existence of a morphotropic phase boundary (MPB) inside HfO2–ZrO2 solid solution thin films has been predicted, if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution along with the dielectric and ferroelectric behaviors of differently designed HfO2–ZrO2 thin films to engineer the density of the MPB inside the film structure and consequently, enhance the dielectric properties. Polarization vs. electric field (P–E) measurements of Hf0.25Zr0.75O2 thin films reveal ferroelectric (FE)–antiferroelectric (AFE) characteristics. For this composition,the dielectric constant εr is higher than those of FE Hf0.5Zr0.5O2 and AFE ZrO2 thin films, the difference is attributed to the formation of the MPB. To increase the density of the MPB and subsequently the dielectric properties, 10 nm Hf0.5Zr0.5O2 (FE)/ZrO2 (AFE) nanolaminates were prepared with different lamina thicknesses tL.
Permanent Link: http://hdl.handle.net/11104/0330666