WO.sub.3./sub. and WO.sub.3-x./sub. thin films prepared by DC hollow cathode discharge

0555890 - FZÚ 2023 RIV GB eng J - Journal Article
Olejníček, Jiří - Hrubantová, Aneta - Volfová, Lenka - Dvořáková, Michaela - Kohout, Michal - Tvarog, Drahoslav - Gedeon, O. - Wulff, H. - Hippler, Rainer - Hubička, Zdeněk
WO₃ and WO_3-x thin films prepared by DC hollow cathode discharge.
Vacuum. Roč. 195, Jan (2022), č. článku 110679. ISSN 0042-207X. E-ISSN 1879-2715
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA21-04477S; GA MPO FV20580
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : tungsten oxide * WO₃ * hollow cathode discharge * sputtering * thin films
OECD category: Fluids and plasma physics (including surface physics)
Impact factor: 4, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.vacuum.2021.110679

Photoactive semiconducting crystalline films of non-stoichiometric tungsten oxides (WO3-x, 0 ≤ x ≤ 3) were deposited by DC hollow cathode discharge from a tungsten nozzle in a reactive Ar + O2 atmosphere. The ratio of tungsten to oxygen in the layer was driven by controlling the O2 flow. All layers were prepared on soda-lime glass substrate (SLG) and on glass substrates coated with an FTO thin film and after deposition were annealed in air or argon atmosphere. The properties of WO3-x layers were analyzed with respect to their potential applications. Surface morphology was analyzed by SEM, qualitative phase analysis by XRD and Raman spectroscopy, chemical composition by EDX and photoactivity of individual samples by linear voltammetry. The layers stoichiometrically closest to WO3 and annealed in an argon atmosphere showed the highest photoactivity response.
Permanent Link: http://hdl.handle.net/11104/0330352