Characterization of radical-enhanced atomic layer deposition process based on microwave surface wave generated plasma

0552189 - FZÚ 2022 RIV US eng J - Journal Article
Tvarog, Drahoslav - Olejníček, Jiří - Kratochvíl, Jiří - Kšírová, Petra - Poruba, A. - Hubička, Zdeněk - Čada, Martin
Characterization of radical-enhanced atomic layer deposition process based on microwave surface wave generated plasma.
Journal of Applied Physics. Roč. 130, č. 1 (2021), č. článku 013301. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) EF16_019/0000760; GA TA ČR(CZ) TM01000039; GA TA ČR TF03000025
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : microwave surfatron * low-temperature plasma * ALD * TiO₂ * plasma diagnostics
OECD category: Fluids and plasma physics (including surface physics)
Impact factor: 2.877, year: 2021
Method of publishing: Limited access
https://doi.org/10.1063/5.0046829

A plasma-assisted atomic layer deposition system employing a microwave surfatron plasma was developed and characterized by spatially resolved Langmuir probe diagnostics and optical emission spectroscopy. The deposition process was applied on TiO2 thin films prepared on Si wafers. The surfatron is equipped with a small ring electrode serving as a source of weak radio frequency plasma helping with fast and reliable ignition of the discharge in molecular gas. Results evaluated in the pure argon plasma proved that the plasma potential and the plasma density are homogeneous in the radial direction, while a rapid decrease was observed in the axial direction. Adding up to 30% of nitrogen into the gas mixture led to less homogeneous plasma parameters in the radial direction together with the increase of the electron effective temperature. Optical emission spectra revealed many Ar I lines of neutral atoms with only a few Ar II ions’ lines.
Permanent Link: http://hdl.handle.net/11104/0327391