Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr.sup.3+./sup. doped Gd.sub.2./sub.O.sub.3./sub.-Ga.sub.2./sub.O.sub.3./sub. binary system

0543043 - FZÚ 2022 RIV US eng J - Journal Article
Lančok, Ján - Novotný, Michal - Volfová, Lenka - More Chevalier, Joris - Pereira, A.
Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr³⁺ doped Gd₂O₃-Ga₂O₃ binary system.
Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films. Roč. 39, č. 4 (2021), č. článku 043403. ISSN 0734-2101. E-ISSN 1520-8559
R&D Projects: GA ČR GA18-17834S; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : wave-guides * optical-properties * thin-films * luminescence properties * structural-properties * growth * deposition * Sm₂O₃-Ga₂O₃ * PLD
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.234, year: 2021
Method of publishing: Limited access
https://doi.org/10.1116/6.0001001

Three different compounds, cubic Gd2O3, orthorhombic GdGaO3, and cubic Gd3Ga5O12 doped with Pr3+ ions were fabricated as waveguiding films by pulsed laser deposition from the same target material, Pr3+ doped Gd3Ga5O12 (Pr:GGG) single crystal. All of them were deposited at the same substrate temperature of 800 °C. The different crystalline phases obtained depend only on the ambient oxygen pressure and the substrate type (YAG or YAP single crystals). The structural and texture properties of the films were analyzed by x-ray diffraction. Pr3+ fluorescence properties were found to be similar to those of the bulk crystals.
Permanent Link: http://hdl.handle.net/11104/0320350