Superradiant Emission from Coherent Excitons in van Der Waals Heterostructures

0542516 - ÚFCH JH 2022 RIV DE eng J - Journal Article
Haider, Golam - Sampathkumar, Krishna - Verhagen, T. - Nádvorník, L. - Farjana, Jaishmin Sonia - Valeš, Václav - Sýkora, Jan - Kapusta, Peter - Němec, P. - Hof, Martin - Frank, Otakar - Chen, Y. F. - Vejpravová, J. - Kalbáč, Martin
Superradiant Emission from Coherent Excitons in van Der Waals Heterostructures.
Advanced Functional Materials. Roč. 2021, MAY 2021 (2021), č. článku 2102196. ISSN 1616-301X. E-ISSN 1616-3028
R&D Projects: GA ČR(CZ) GX20-08633X; GA ČR(CZ) GX19-26854X
Institutional support: RVO:61388955
Keywords : light emission * quantum * layer * laser * absorption * radiation * emitters * energy * coherent excitons * low temperature * photon correlation * superradiance * van‐ * der Waals heterostructures
OECD category: Physical chemistry
Impact factor: 19.924, year: 2021
Method of publishing: Open access

Recent advancements in isolation and stacking of layered van der Waals materials have created an unprecedented paradigm for demonstrating varieties of 2D quantum materials. Rationally designed van der Waals heterostructures composed of monolayer transition-metal dichalcogenides (TMDs) and few-layer hBN show several unique optoelectronic features driven by correlations. However, entangled superradiant excitonic species in such systems have not been observed before. In this report, it is demonstrated that strong suppression of phonon population at low temperature results in a formation of a coherent excitonic-dipoles ensemble in the heterostructure, and the collective oscillation of those dipoles stimulates a robust phase synchronized ultra-narrow band superradiant emission even at extremely low pumping intensity. Such emitters are in high demand for a multitude of applications, including fundamental research on many-body correlations and other state-of-the-art technologies. This timely demonstration paves the way for further exploration of ultralow-threshold quantum-emitting devices with unmatched design freedom and spectral tunability.
Permanent Link: http://hdl.handle.net/11104/0319912