Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

0541788 - ÚJF 2022 RIV CH eng J - Journal Article
Hlushko, K. - Macková, Anna - Zálešák, J. - Burghammer, M. - Davydok, A. - Krywka, C. - Daniel, R. - Keckes, J. - Todt, J.
Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction.
Thin Solid Films. Roč. 722, MAR (2021), č. článku 138571. ISSN 0040-6090. E-ISSN 1879-2731
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:61389005
Keywords : Tungsten thin film * Ion irradiation * residual stress
OECD category: Nano-materials (production and properties)
Impact factor: 2.358, year: 2021
Method of publishing: Limited access
https://doi.org/10.1016/j.tsf.2021.138571

The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 mu m thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of inplane compressive residual stresses from -2.5 to - 0.75 GPa after the irradiation, which is correlated with the calculated displacements per atom within a similar to 2 mu m thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.
Permanent Link: http://hdl.handle.net/11104/0319321