Deposition of cobalt oxide films by reactive pulsed magnetron sputtering

0541687 - FZÚ 2022 RIV CH eng J - Journal Article
Hippler, Rainer - Čada, Martin - Kšírová, Petra - Olejníček, Jiří - Jiříček, Petr - Houdková, Jana - Wulff, H. - Kruth, A. - Helm, C.A. - Hubička, Zdeněk
Deposition of cobalt oxide films by reactive pulsed magnetron sputtering.
Surface and Coatings Technology. Roč. 405, Jan (2021), č. článku 126590. ISSN 0257-8972
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MPO FV20580; GA ČR GA19-00579S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; AV ČR(CZ) StrategieAV21/6
Program: StrategieAV
Institutional support: RVO:68378271
Keywords : cobalt oxide film * pulsed magnetron sputtering * HiPIMS * Raman spectroscopy * XPS * XRD * electrical resistivity
OECD category: Fluids and plasma physics (including surface physics)
Impact factor: 4.865, year: 2021
Method of publishing: Limited access
https://doi.org/10.1016/j.surfcoat.2020.126590

Cobalt oxide films were deposited with the help of reactive HiPIMS and mid-frequency pulsed magnetron sputtering (PMS) in argon gas at an argon gas pressure of 1 Pa and with different oxygen admixtures. The intensity of plasma ions, in particular Co+ and O+, is enhanced during HiPIMS compared to PMS and extends to larger ion energies. Films deposited on glass substrates were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. Crystal structure and electrical resistivity of as-deposited films were found to depend on the deposition conditions. Deposited films are compatible with a non-stoichiometric Co3O4 spinel type crystal structure with unoccupied cobalt sites. PMS produces films with a preferred lattice orientation. HiPIMS show large internal stress which relaxes during annealing. Electrical resistivity is several orders of magnitude smaller for films deposited by HiPIMS compared to PMS.
Permanent Link: http://hdl.handle.net/11104/0319218