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Synthesis of Cu-Ti thin film multilayers on silicon substrates
- 1.0541428 - ÚJF 2022 RIV IN eng J - Journal Article
Torrisi, Alfio - Horák, Pavel - Vacík, Jiří - Lavrentev, Vasyl - Cannavó, Antonino - Ceccio, Giovanni - Vaniš, Jan - Yatskiv, Roman - Grym, Jan
Synthesis of Cu-Ti thin film multilayers on silicon substrates.
Bulletin of Materials Science. Roč. 44, č. 1 (2021), č. článku 50. ISSN 0250-4707. E-ISSN 0973-7669
R&D Projects: GA ČR GA19-02804S
Research Infrastructure: CANAM II - 90056
Institutional support: RVO:67985882 ; RVO:61389005
Keywords : chemiresistors * intermixing layers * thermal annealing * SIMS analysis * Cu-Ti
OECD category: Materials engineering; Electrical and electronic engineering (URE-Y)
Impact factor: 1.878, year: 2021 ; AIS: 0.24, rok: 2021
Method of publishing: Limited access
Result website:
https://doi.org/10.1007/s12034-020-02346-6DOI: https://doi.org/10.1007/s12034-020-02346-6
Metal-oxide-based sensors (MOS) can be used for several technological applications in microelectronics, due to their low cost and sensitive capabilities to different chemical species. On the perspective to develop CuO-TiO2 MOS, our goal was to obtain a homogeneous intermixing of Cu and Ti in the bulk structure of the detectors, exploring the most promising combination between such elements and avoiding the presence of Cu-Ti-O compounds. To do that, several Cu and Ti thin layers were alternatively deposited by Ar+ sputtering on silicon wafers and, subsequently, oxidized by thermal annealing. The obtained samples were characterized in terms of %at. Cu-Ti ratios (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations), showing the abundance ratios of such elements in the whole structure. In particular, SIMS maps allowed to study the spatial distribution and thickness of each phase of the Cu-Ti multilayers and further to observe the Cu diffusion and the mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. This unwanted effect represents an open issue that has to be investigated, in order to improve the MOS fabrication.
Permanent Link: http://hdl.handle.net/11104/0318986
Number of the records: 1