Propagation length of antiferrornagnetic magnons governed by domain configurations

0541020 - FZÚ 2021 RIV US eng J - Journal Article
Ross, A. - Lebrun, R. - Gomonay, O. - Grave, D.A. - Kay, A. - Baldrati, L. - Becker, S. - Qaiumzadeh, A. - Ulloa, C. - Jakob, G. - Kronast, F. - Sinova, Jairo - Duine, R. - Brataas, A. - Rothschild, A. - Klaeui, M.
Propagation length of antiferrornagnetic magnons governed by domain configurations.
Nano Letters. Roč. 20, č. 1 (2020), s. 306-313. ISSN 1530-6984. E-ISSN 1530-6992
EU Projects: European Commission(XE) 766566 - ASPIN
Institutional support: RVO:68378271
Keywords : antiferromagnets * magnons * magnetic domains * XMLD-PEEM magnetic imaging * spin transport * magnon scattering
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 11.189, year: 2020
Method of publishing: Limited access
https://doi.org/10.1021/acs.nanolett.9b03837

The compensated magnetic order and characteristic terahertz frequencies of antiferromagnetic materials make them promising candidates to develop a new class of robust, ultrafast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation over micrometer distances in thin films of the insulating antiferromagnet hematite with large magnetic domains while evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we determine the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin transport is achieved across micrometers, as required for device integration.
Permanent Link: http://hdl.handle.net/11104/0318592