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Possibilities of laser recrystallization and laser ablation in thin-layer structures based on a-Si:H
- 1.0540759 - FZÚ 2021 RIV CZ eng A - Abstract
Stuchlík, Jiří - Stuchlíková, The-Ha - Fajgar, Radek - Kupčík, Jaroslav - Remeš, Zdeněk
Possibilities of laser recrystallization and laser ablation in thin-layer structures based on a-Si:H.
Online, 2020.
[4th BIATRI Workshop. 09.12.2020-10.12.2020, Online]
R&D Projects: GA MŠMT LM2018110; GA ČR GC19-02858J; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : CVD * thin films * a-Si:H * nanoparticles
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Condensed matter physics (including formerly solid state physics, supercond.) (UCHP-M)
Our goal is to enhance optoelectronic properties and light conversion efficiency in hydrogenated silicon thin films by in-situ embedded nanoparticles using radio frequency chemical vapor deposition (RF CVD) combined with other methods such as molecular beam epitaxy, magnetron sputtering, Langmuir/Blodgett method, reactive deposition epitaxy, laser surface treatment, laser ablation, reactive laser ablation, vacuum evaporation and plasma treatment.
Permanent Link: http://hdl.handle.net/11104/0318371
Number of the records: 1