Oxygen vacancies in perovskite oxide piezoelectrics

0539022 - FZÚ 2021 RIV CH eng J - Journal Article
Tyunina, Marina
Oxygen vacancies in perovskite oxide piezoelectrics.
Materials. Roč. 13, č. 24 (2020), s. 1-11, č. článku 5596. E-ISSN 1996-1944
R&D Projects: GA ČR(CZ) GA19-09671S; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : perovskite oxide * ferroelectric * oxygen vacancy * electronic * semiconductor
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.623, year: 2020
Method of publishing: Open access

The excellent electro-mechanical properties of perovskite oxide ferroelectrics make these materials major piezoelectrics. Oxygen vacancies are believed to easily form, migrate, and strongly affect ferroelectric behavior and, consequently, the piezoelectric performance of these materials and devices based thereon. Mobile oxygen vacancies were proposed to explain high-temperature chemical reactions half a century ago. Today the chemistry-enabled concept of mobile oxygen vacancies has been extrapolated to arbitrary physical conditions and numerous effects and is widely accepted. Here, this popular concept is questioned. The concept is shown to conflict with our modern physical understanding of ferroelectrics. Basic electronic processes known from mature semiconductor physics are demonstrated to explain the key observations that are groundlessly ascribed to mobile oxygen vacancies. The concept of mobile oxygen vacancies is concluded to be misleading.

Permanent Link: http://hdl.handle.net/11104/0316764