Number of the records: 1
Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga.sub.2./sub.O.sub.3./sub. studied by terahertz spectroscopy
- 1.0538408 - FZÚ 2021 RIV US eng J - Journal Article
Blumenschein, N. - Kadlec, Christelle - Romanyuk, Olexandr - Paskova, T. - Muth, J.F. - Kadlec, Filip
Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy.
Journal of Applied Physics. Roč. 127, č. 16 (2020), s. 1-8, č. článku 165702. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA17-03662S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; NSF OISE(US) 1458427
Institutional support: RVO:68378271
Keywords : terahertz spectroscopy, * gallium oxide, * localized charge carriers
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.546, year: 2020
Method of publishing: Limited access
https://doi.org/10.1063/1.5143735
Dielectric and conducting properties of unintentionally doped bulk and Sn-doped thin film β-Ga2O3 samples were studied using time- domain terahertz spectroscopy. The low-temperature spectra of the unintentionally doped sample were fit using a model involving two oscillators. The parameters of one of them show an unusual temperature dependence, in particular, a pronounced increase in the oscillator strength upon heating above 50 K. This is interpreted as an absorption due to thermally activated charge carriers moving in localized potential minima linked to the unintentional doping. Upon heating, the influence of this optical conductivity mechanism strongly increases, and the sample becomes opaque in the THz range near 100 K. The nanocrystalline Sn-doped Ga2 O3 thin film sample exhibits a much higher optical conductivity than the unintentionally doped bulk sample, and its spectra are remarkably stable over a broad temperature range (4–750 K).
Permanent Link: http://hdl.handle.net/11104/0316213
Number of the records: 1