TID and SEU testing of the novel X-CHIP-03 monolithic pixel detector

0538009 - FZÚ 2021 RIV GB eng J - Journal Article
Marčišovská, M. - Dudas, D. - Havránek, M. - Kabátová, A. - Kafka, V. - Kostina, A. - Macková, A. - Marcisovský, M. - Mitrofanov, S. V. - Popule, Jiří - Romanenko, Oleksandr V. - Tomášek, L. - Vrba, V.
TID and SEU testing of the novel X-CHIP-03 monolithic pixel detector.
Journal of Instrumentation. Roč. 15, č. 1 (2020), s. 1-11, č. článku C01043. ISSN 1748-0221. E-ISSN 1748-0221
R&D Projects: GA MŠMT EF16_013/0001812
Institutional support: RVO:68378271 ; RVO:61389005
Keywords : radiation damage to detector materials (solid state) * radiation damage to electronic components * radiation-hard detectors * radiation-hard electronics
OECD category: Particles and field physics; Nuclear physics (UJF-V)
Impact factor: 1.415, year: 2020
Method of publishing: Limited access
https://doi.org/10.1088/1748-0221/15/01/C01043

We present a SEE and TID effect study of the novel monolithic pixel detector, X-CHIP-03, manufactured in a 180 nm SOI technology. The SEU cross section of the custom D flip-flops in the X-CHIP-03 ASIC has been evaluated using accelerated ions with LET ranging from 0.45 to 69 MeVċcm2ċmg−1. The global TID response of the X-CHIP-03 has been evaluated at a dose rate of 16.2 Gyċmin−1. The direct I-V measurements of transistor properties were made under identical radiation conditions using the predecessor X-CHIP-02 ASIC manufactured in the same technology, which contains the transistor testing matrices for TID measurements.

Permanent Link: http://hdl.handle.net/11104/0315849