Quantum dots grown by metal-organic vapot phase epitax

0537997 - FZÚ 2021 RIV SK eng C - Conference Paper (international conference)
Hulicius, Eduard - Hospodková, Alice - Slavická Zíková, Markéta
Quantum dots grown by metal-organic vapot phase epitax.
20th Conference of Czech and Slovak Physicists Proceedings. Košice: Slovak Physical Society, Czech Physical Society, 2020 - (Džubinská, A.; Reiffers, M.), s. 73-74. ISBN 978-80-89855-13-1.
[Conference of Czech and Slovak Physicists /20./. Prague (CZ), 07.09.2020-10.09.2020]
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum dots * MOVPE * InGaAs * GaAs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

MOVPE-grown QDs have been prepared and studied by many MOVPE technological teams for more than 25 years, but their real current application is still limited. The situation is comparable with QWrs. In comparison with QWs, both of these structures are not mature. Materials that can be used for QD structures come from many semiconductor families like arsenide, antimonite, phosphide, telluride, and nitride binaries and ternaries. QD structure material choice (including substrate material like GaAs, Si, sapphire, SiC, perovskite, etc.) can drive emitted wavelength, influence temperature and structure stability, and, of course, the cost of devices. Complex internal QD device structures like QD size and shape, SRLs and spacers (materials and thicknesses), QD layer multiplicity for stacking-layer structure, material and thickness of the capping layer, and the system of buffer layers can affect QD device parameters and their possible applications.
Permanent Link: http://hdl.handle.net/11104/0315829