Strain and Piezo-Doping Mismatch between Graphene Layers

0534508 - ÚFCH JH 2021 RIV US eng J - Journal Article
Forestier, A. - Balima, F. - Bousige, C. - Pinheiro, G. S. - Fulcrand, R. - Kalbáč, Martin - Machon, D. - San-Miguel, A.
Strain and Piezo-Doping Mismatch between Graphene Layers.
Journal of Physical Chemistry C. Roč. 124, č. 20 (2020), s. 11193-11199. ISSN 1932-7447. E-ISSN 1932-7455
R&D Projects: GA MŠMT(CZ) LTC18039; GA MŠMT(CZ) EF16_013/0001821
Grant - others:GA MŠk(CZ) CZ.02.1.01/0.0/0.0/16_013/0001821
Institutional support: RVO:61388955
Keywords : raman-spectroscopy * bilayer graphene * high-pressure * compression * scattering * electron * argon
OECD category: Physical chemistry
Impact factor: 4.126, year: 2020
Method of publishing: Limited access

Modulation of electronic properties of bilayer materials through the strain and doping mismatch between layers opens new opportunities in 2D material straintronics. We present here a new approach allowing to generate asymmetric strain or doping between layers and a method to quantify it using a supported isotopically labeled bilayer graphene studied by in situ Raman spectroscopy. Strain differences up to similar to 0.1% between the two graphene layers have been obtained by applying pressures of up to 10 GPa with nonpolar solid environments. However, when immersed in a liquid polar environment, namely, a mixture of ethanol and methanol, a piezo-doping mismatch between layers is observed. This asymmetrical doping increases with pressure, leading to charge concentration differences between layers of the order of 10(13) cm(-2). Our approach thus allows disentangling strain and doping effects in high-pressure experiments evidencing the asymmetries of these phenomena and comforting isotopic bilayer graphene as a benchmark system for the study of asymmetric effects in devices or composite surfaces.
Permanent Link: http://hdl.handle.net/11104/0312694