Radiation resistance of nanolayered silicon nitride capacitors

0533408 - FZÚ 2021 RIV NL eng J - Journal Article
Romanova, M. - Avotina, L. - Andrulevicius, M. - Dekhtyar, Y. - Enichek, G. - Kizane, G. - Novotný, Michal - Pajuste, E. - Pokorný, Petr - Yager, T. - Zaslavski, A.
Radiation resistance of nanolayered silicon nitride capacitors.
Nuclear Instruments & Methods in Physics Research Section B. Roč. 471, May (2020), s. 17-23. ISSN 0168-583X. E-ISSN 1872-9584
Grant - others:AV ČR(CZ) LZA-16-01
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : silicon nitride * capacitor * capacitance * breakdown voltage * gamma radiation * nanocapacitor
OECD category: Coating and films
Impact factor: 1.377, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.nimb.2020.03.010

Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation did not influence the breakdown voltage of the capacitors but decreased their capacitance measured at 1 MHz frequency.
Permanent Link: http://hdl.handle.net/11104/0311797