Improvement of luminescence properties of n-GaN using TEGa precursor

0533199 - FZÚ 2021 RIV NL eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Kuldová, Karla - Slavická Zíková, Markéta - Pangrác, Jiří - Čížek, J. - Liedke, M.O. - Butterilng, M. - Wagner, A. - Hubík, Pavel - Hulicius, Eduard
Improvement of luminescence properties of n-GaN using TEGa precursor.
Journal of Crystal Growth. Roč. 531, Feb (2020), s. 1-7, č. článku 125383. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA TA ČR TH02010014; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * TEGa precursor * n-GaN * yellow band * V.sub.Ga.-sub. defect
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.797, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2019.125383

The aim of this work is to compare and improve optical and structural properties of GaN layers prepared using TMGa or TEGa precursors. These layers contain deep and shallow acceptor levels which are responsible for blue and yellow defect bands in luminescent spectra. Especially n-doped GaN layers suffer from strong yellow defect bands. In this work, it is shown that yellow band photoluminescence intensity can be suppressed by using TEGa precursor during the growth of n–doped GaN layers. Different kinds of growth parameters have been studied. It is also shown that the change of carrier gas (H2 or N2) has very strong influence on the layer quality. H2 carrier gas increased intensity of yellow band in sample grown from TEGa precursor while N2 carrier gas had the same effect for sample grown from TMGa precursor. Variable energy positron annihilation spectroscopy showed creation of single VGa in H2 atmosphere and clustering of VGa to big complexes ((VGa)3(VN)n) in N2 atmosphere.
Permanent Link: http://hdl.handle.net/11104/0311664