Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor

0533057 - ÚFCH JH 2021 RIV DE eng J - Journal Article
Haider, Golam - Wang, Y. H. - Farjana, Jaishmin Sonia - Chiang, Ch.-W. - Frank, Otakar - Vejpravová, J. - Kalbáč, Martin - Chen, Y.-F.
Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor.
Advanced Optical Materials. Roč. 8, č. 19 (2020), č. článku 2000859. ISSN 2195-1071. E-ISSN 2195-1071
R&D Projects: GA ČR(CZ) GX20-08633X; GA MŠMT(CZ) EF16_027/0008355; GA MŠMT(CZ) LTAUSA19001; GA MŠMT EF16_026/0008382
Grant - others:Ministerstvo školství, mládeže a tělovýchovy - GA MŠk(CZ) CZ.02.1.01/0.0/0.0/16_026/0008382
Institutional support: RVO:61388955
Keywords : zinc-oxide nanostructures * hybrid graphene * strain sensors * electronics * photodetectors * responsivity * transistors * skin * mechanics * pressure * gate-tunable phototransistor * single-layer graphene * stretchable phototransistor * ultrahigh responsivity * ZnO nanoparticles
OECD category: Physical chemistry
Impact factor: 9.926, year: 2020
Method of publishing: Limited access

Despite being one of the most robust materials with intriguing optoelectronic properties, the practical use of single-layer graphene (SLG) in soft-electronic technologies is limited due to its poor native stretchability, low absorption coefficient, poor on/off ratio, etc. To circumvent these difficulties, here, a rippled gate-tunable ultrahigh responsivity nanostack phototransistor composed of SLG, semiconductor-nanoparticles (NPs), and metallic-nanowires (NWs) embedded in an elastic film is proposed. The unique electronic conductivity of SLG and high absorption strength of semiconductor-NPs produce an ultrahigh photocurrent gain. The metallic NWs serve as an excellent stretchable gate electrode. The ripple structured nanomaterials surmount their native stretchability, providing strength and electromechanical stability to the composite. Combining all these unique features, highly stretchable and ultrasensitive phototransistors are created, which can be stretched up to 30% with high repeatability maintaining a photoresponsivity, photocurrent gain, and detectivity of approximate to 10(6)A W-1, 10(7), and 10(13)Jones, respectively, which are comparable with the same class of rigid devices. In addition, the device can be turned-off by applying a suitable gate voltage, which is very convenient for photonic circuits. Moreover, the study can be extended to many other 2D systems, and therefore paves a crucial step for designing high-performance soft optoelectronic devices for practical applications.
Permanent Link: http://hdl.handle.net/11104/0311556