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Photonic crystal cavity-enhanced emission from silicon vacancy centers in polycrystalline diamond achieved without postfabrication fine-tuning

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    0533005 - FZÚ 2021 RIV GB eng J - Journal Article
    Ondič, Lukáš - Varga, Marián - Fait, Jan - Hruška, Karel - Jurka, Vlastimil - Kromka, Alexander - Maňák, Jan - Kapusta, Peter - Nováková, J.
    Photonic crystal cavity-enhanced emission from silicon vacancy centers in polycrystalline diamond achieved without postfabrication fine-tuning.
    Nanoscale. Roč. 12, č. 24 (2020), s. 13055-13063. ISSN 2040-3364. E-ISSN 2040-3372
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA19-14523S
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; AV ČR LQ100102001
    Program: Prémie Lumina quaeruntur
    Institutional support: RVO:68378271 ; RVO:61388955
    Keywords : polycrystalline diamond film * photonic structures * optical centers * SiV photoluminescence
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UFCH-W)
    Impact factor: 7.790, year: 2020
    Method of publishing: Limited access
    https://doi.org/10.1039/c9nr10580h

    Diamond optical centers have emerged as promising single-photon sources for quantum photonics. Particularly, SiV centers show great promise due to their narrow zero-phonon emission line present also at room temperature. However, due to fabrication tolerances it is challenging to prepare directly photonic structures with optical modes spectrally matching the emission of SiV centers. To reach the spectral overlap, photonic structures must typically undergo complicated post-processing treatment. In this work, suspended photonic crystal cavities made of polycrystalline diamond are engineered and more than 2.5-fold enhancement of the SiV center ZPL intensity via coupling to the cavity photonic mode is demonstrated. The non-homogeneous thickness of the diamond film is taken as an advantage that enables reaching the spectral overlap between the emission from SiV centers and the cavity modes without any post-processing.

    Permanent Link: http://hdl.handle.net/11104/0311508

     
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