New perspectives for heavily boron-doped diamond Raman spectrum analysis

0532981 - FZÚ 2021 RIV US eng J - Journal Article
Mortet, Vincent - Gregora, Ivan - Taylor, Andrew - Lambert, Nicolas - Ashcheulov, Petr - Gedeonová, Zuzana - Hubík, Pavel
New perspectives for heavily boron-doped diamond Raman spectrum analysis.
Carbon. Roč. 168, Oct (2020), s. 319-327. ISSN 0008-6223. E-ISSN 1873-3891
R&D Projects: GA ČR GA17-05259S; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : diamond * boron-doped * Raman scattering * temperature dependence * Fano interaction
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 9.594, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.carbon.2020.06.075

Although Raman spectroscopy is a good tool for effective assessment of atomic boron concentration in diamond, determination of further physical properties using this non-destructive approach requires advancement in Raman analysis. In this work, we present an extended study of the Raman spectrum of boron-doped diamond, over a broad boron doping range and at increasing measurement temperature, based on the interaction between phonon and electronic Raman scattering effects. The presented analysis demonstrates the considerable contribution of electronic Raman scattering to the Raman spectrum and opens a practical route toward determination of additional boron-doped diamond properties, such as carrier concentration and carrier mobility.

Permanent Link: http://hdl.handle.net/11104/0311485