A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

0532847 - FZÚ 2021 RIV NL eng J - Journal Article
Hospodková, Alice - Hájek, František - Pangrác, Jiří - Slavická Zíková, Markéta - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Vaněk, Tomáš - Vetushka, Aliaksi - Čížek, J. - Liedke, M.O. - Butterling, M. - Wagner, A.
A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures.
Journal of Crystal Growth. Roč. 536, Apr (2020), s. 1-6, č. článku 125579. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2015087; GA TA ČR TH02010580; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum wells * defects * impurities * metalorganic vapor phase epitaxy * nitrides
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.797, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2020.125579

This work suggests new alternative explanation why a single InGaN QW or the deepest QWs in the MQW structures suffer with a high non-radiative recombination rate. According to SIMS results, positron annihilation spectroscopy and photoluminescence measurements we suggest that vacancy of Ga in complex with hydrogen atoms can play a dominant role in non-radiative Shockley-Read-Hall recombination of the deepest QWs in InGaN/GaN MQW structures. Vacancy of Ga originate dominantly in GaN buffer layers grown at higher temperatures in H2 atmosphere and are transported to the InGaN/GaN MQW region by diffusion, where they are very effectively trapped in InGaN layers and form complex defects with hydrogen atoms during epitaxy of InGaN layers. Trapping of Ga vacancies is another suggested mechanism explaining why the widely used In containing prelayers help to increase the luminescence efficiency of the InGaN/GaN MQW active region grown above them.

Permanent Link: http://hdl.handle.net/11104/0311234