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Laser-generated ns plasma pulses characterized using SiC Schottky diode
- 1.0531997 - ÚJF 2021 RIV DE eng J - Journal Article
Torrisi, L. - Torrisi, Alfio - Cutroneo, Mariapompea
Laser-generated ns plasma pulses characterized using SiC Schottky diode.
Contributions to Plasma Physics. Roč. 60, č. 7 (2020), č. článku 202000012. ISSN 0863-1042. E-ISSN 1521-3986
Institutional support: RVO:61389005
Keywords : laser-generated plasma * photopeak * SiC-TOF * SiC detector
OECD category: Fluids and plasma physics (including surface physics)
Impact factor: 1.563, year: 2020
Method of publishing: Limited access
https://doi.org/10.1002/ctpp.202000012
The nonequilibrium plasma generated by nanosecond laser pulse is characterized using a SiC detector connected in time-of-flight configuration to measure the radiations emitted from the plasma. Different metallic targets were irradiated by the pulsed laser at an intensity of 10(10) W/cm(2)and 200 mJ pulse energy. The SiC allows detecting ultraviolet radiations and soft X-rays, electrons, and ions. The obtained plasma has a temperature of the order of tens to hundreds eV depending on the atomic number of the irradiated target and ion accelerations of the order of 100 eV per charge state.
Permanent Link: http://hdl.handle.net/11104/0310608
Number of the records: 1