Transferless Inverted graphene/silicon heterostructures prepared by plasma-enhanced chemical vapor deposition of amorphous silicon on CVD graphene

0531897 - FZÚ 2021 RIV CH eng J - Journal Article
Müller, Martin - Bouša, Milan - Hájková, Zdeňka - Ledinský, Martin - Fejfar, Antonín - Drogowska-Horna, Karolina A. - Kalbáč, Martin - Frank, Otakar
Transferless Inverted graphene/silicon heterostructures prepared by plasma-enhanced chemical vapor deposition of amorphous silicon on CVD graphene.
Nanomaterials. Roč. 10, č. 3 (2020), s. 1-10, č. článku 589. E-ISSN 2079-4991
R&D Projects: GA MŠMT EF16_026/0008382; GA ČR(CZ) GA17-18702S; GA MŠMT(CZ) EF16_013/0001821; GA MŠMT LM2018110
Grant - others:OP VVV - CARAT CZ.02.1.01/0.0/0.0/16_026/0008382
Institutional support: RVO:68378271 ; RVO:61388955
Keywords : silicon * graphene * heterostructure * CDV
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UFCH-W)
Impact factor: 5.076, year: 2020
Method of publishing: Open access

The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult-as is the case of graphene on noncatalytic substrates such as Si-inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 degrees C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics.
Permanent Link: http://hdl.handle.net/11104/0310529