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Functional nano-structuring of thin silicon nitride membranes

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    0525191 - ÚPT 2021 RIV SK eng J - Journal Article
    Matějka, Milan - Krátký, Stanislav - Řiháček, Tomáš - Knápek, Alexandr - Kolařík, Vladimír
    Functional nano-structuring of thin silicon nitride membranes.
    Journal of Electrical Engineering - Elektrotechnický časopis. Roč. 71, č. 2 (2020), s. 127-130. ISSN 1335-3632. E-ISSN 1339-309X
    R&D Projects: GA TA ČR(CZ) TN01000008; GA MŠMT ED0017/01/01
    Institutional support: RVO:68081731
    Keywords : membrane * nano optical device * electron optics * electron beam lithography * silicon nitride * reactive ion etching * silicon etching * microfabrication
    OECD category: Nano-processes (applications on nano-scale)
    Impact factor: 0.647, year: 2020
    Method of publishing: Open access
    https://content.sciendo.com/view/journals/jee/71/2/article-p127.xml

    The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.
    Permanent Link: http://hdl.handle.net/11104/0309382

     
     
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