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Acquisition of the dopant contrast in semiconductors with slow electrons

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    0525062 - ÚPT 2021 RIV NL eng J - Journal Article
    Frank, Luděk - Hovorka, Miloš - El Gomati, M. M. - Müllerová, Ilona - Mika, Filip - Mikmeková, Eliška
    Acquisition of the dopant contrast in semiconductors with slow electrons.
    Journal of Electron Spectroscopy and Related Phenomena. Roč. 241, MAY (2020), č. článku 146836. ISSN 0368-2048. E-ISSN 1873-2526
    R&D Projects: GA TA ČR(CZ) TE01020118; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01
    EU Projects: European Commission(XE) 606988 - SIMDALEE2
    Institutional support: RVO:68081731
    Keywords : semiconductors * dopant contrast * low energy SEM * PEEM * mirror electron microscopy * surface treatments
    OECD category: Electrical and electronic engineering
    Impact factor: 1.957, year: 2020
    Method of publishing: Open access
    https://www.sciencedirect.com/science/article/pii/S036820481830135X

    Methods available for the mapping of dopants in silicon-based semiconductor structures with p-type as well as n-type doped patterns using low and very-low-energy electrons are reviewed together with the results of demonstration experiments.
    Permanent Link: http://hdl.handle.net/11104/0309284

     
     
Number of the records: 1