High energy Au plus ion implantation of polar and nonpolar ZnO-Structure modification and optical properties

0524445 - ÚJF 2021 RIV US eng J - Journal Article
Jagerová, Adéla - Malinský, Petr - Mikšová, Romana - Nekvindová, P. - Cajzl, J. - Ryšánek, P. - Macková, Anna
High energy Au plus ion implantation of polar and nonpolar ZnO-Structure modification and optical properties.
Surface and Interface Analysis. Roč. 52, č. 12 (2020), s. 1083-1088. ISSN 0142-2421. E-ISSN 1096-9918
R&D Projects: GA MŠMT LM2015056; GA MŠMT EF16_013/0001812; GA ČR GA18-03346S
Institutional support: RVO:61389005
Keywords : defects * luminescence * polar and nonpolar ZnO * ZnO implantation
OECD category: Nuclear physics
Impact factor: 1.607, year: 2020
Method of publishing: Limited access
https://doi.org/10.1002/sia.6789

The paper presents a study of 5-MeV energy Au+ ion implantation in polar c-plane (0001), nonpolar a-plane (11-20) and m-plane (10-10) ZnO crystallographic cuts using fluences of 5 x 10(14) and 1 x 10(15) cm(-2). The implanted samples were subsequently annealed in O-2 atmosphere at 600 degrees C. It was shown that a-plane ZnO exhibited a lowest level of Zn sublattice disorder evidenced by Rutherford backscattering spectroscopy in channelling mode (RBS-C). In contrast, m-plane ZnO showed the highest disorder. The disorder in the Zn sublattice grew progressively in the subsurface as well as in the implanted layer in c-plane and m-plane ZnO, while a-plane has shown slight increase of disorder just in the implanted layer. Angular scans provided using RBS-C have shown the preservation of channelling effect in the subsurface layer in a-plane ZnO. On the contrary, the narrowed and shallow angular scan dips were seen in m-plane ZnO. Raman spectroscopy has shown significant O-sublattice disorder and O rearrangement mainly in a-plane and m-plane ZnO compared to c-plane. After ion implantation, the exciton-related luminescence band at 375 nm vanished almost completely, and the defect-related band 'shifted' to shorter wavelengths. Annealing has beneficial influence on near-band-edge (NBE) luminescence recovery, whereas deep-level-emission (DLE) luminesce has been shifted to lower wavelengths than appeared after implantation.
Permanent Link: http://hdl.handle.net/11104/0312723