0524022 - ÚCHP 2021 RIV CH eng J - Journal Article
Koštejn, Martin - Fajgar, Radek - Dřínek, Vladislav - Jandová, Věra - Kupčík, Jaroslav - Huber, S. - Mikysek, Petr
Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation.
Materials Chemistry and Physics. Roč. 251, SEP 1 (2020), č. článku 123105. ISSN 0254-0584. E-ISSN 1879-3312
Grant - others:AV ČR(CZ) StrategieAV21/3
Program: StrategieAV
Institutional support: RVO:67985858 ; RVO:67985831
Keywords : ferromagnetic material * thin layer * crystalline nanoparticles
OECD category: Physical chemistry; Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) (GLU-S)
Impact factor: 4.094, year: 2020 ; AIS: 0.513, rok: 2020
Method of publishing: Open access with time embargo
DOI: https://doi.org/10.1016/j.matchemphys.2020.123105

Pulsed laser deposition and post-annealing was used for the preparation of MnSix and MnGex thin layers in order to study the increase of ferromagnetic properties related to crystalline phases. As-prepared samples were mainly amorphous with Mn concentration ranging from 20 to 50 at.%. Annealing of MnSix and MnGex layers at 600 °C and 350 °C, respectively, led to the formation of crystalline nanoparticles with the diameter from 10 to 20 nm. Magnetization measured at 300 K showed that the annealed MnSix layers exhibited magnetization of 0.07 μB/Mn atom. Magnetization of annealed MnGex layers varied depending on Mn concentration from 0.1 μ B/Mn atom (30 at.%) to 0.4 μ B/Mn atom (47 at.%). Resistivity measurements of the annealed layers showed values typical for highly degenerate silicon (~10-3.Ω.m) and germanium (~10-5.Ω.m). Temperature dependence of resistivity revealed that, after annealing, only MnSix layers with lower Mn concentration preserved a semiconducting behaviour.
Permanent Link: http://hdl.handle.net/11104/0308907