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Selective modification of electrical insulator material by ion micro beam for the fabrication of circuit elements
- 1.0523923 - ÚJF 2021 RIV GB eng J - Journal Article
Cutroneo, Mariapompea - Havránek, Vladimír - Macková, Anna - Malinský, Petr - Torrisi, Alfio - Silipigni, L. - Sofer, Z. - Torrisi, L.
Selective modification of electrical insulator material by ion micro beam for the fabrication of circuit elements.
Radiation Effects and Defects in Solids. Roč. 175, 3-4 (2020), s. 307-317. ISSN 1042-0150. E-ISSN 1029-4953
R&D Projects: GA MŠMT LM2015056; GA MŠMT EF16_013/0001812; GA ČR GA19-02482S
Institutional support: RVO:61389005
Keywords : electrical insulator * ion micro beam writing * electrical conductivity * Raman spectroscopy
OECD category: Nuclear physics
Impact factor: 1.141, year: 2020
Method of publishing: Limited access
https://doi.org/10.1080/10420150.2019.1701462
Two well-established electrical insulators, graphene oxide and poly(methylmethacrylate) (PMMA) have been selectively exposed to controlled energy and fluence of ions. Ion micro beam has been proposed for processing of both graphene-based material and polymeric foils for tailoring of their properties. In a single step, the mask-less production of pattern on graphene-oxide and poly(methylmethacrylate) was realized at the Tandetron Laboratory of the Nuclear Physics Institute (Czech Republic) using a stream of 2.2 MeV alpha particles. Elements of a circuit were written on GO and poly(methylmethacrylate) in a controlled way using a software written in LabVIEW code. The induced deoxygenation, and dehydrogenation change the compositional, structural and electrical properties in the exposed samples. The accuracy of the method has been investigated by Rutherford backscattering spectrometry, elastic recoil detection analysis, Raman microscopy and the electrical standard two points method.
Permanent Link: http://hdl.handle.net/11104/0308213
Number of the records: 1