Deep levels, charge transport and mixed conductivity in organometallic halide perovskites

0521386 - FZÚ 2020 RIV GB eng J - Journal Article
Musiienko, A. - Moravec, P. - Grill, R. - Praus, P. - Vasylchenko, I. - Pekárek, J. - Tisdale, J. - Ridzonova, K. - Belas, E. - Landová, Lucie - Hu, B. - Lukosi, E. - Ahmadi, M.
Deep levels, charge transport and mixed conductivity in organometallic halide perovskites.
Energy & Environmental Science. Roč. 12, č. 4 (2019), s. 1413-1425. ISSN 1754-5692. E-ISSN 1754-5706
R&D Projects: GA ČR GJ17-26041Y
Institutional support: RVO:68378271
Keywords : methylammonium lead iodide * open-circuit voltage * intrinsic defects * point-defects * solar-cells * recombination * photoconductivity * scattering
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 30.289, year: 2019
Method of publishing: Limited access
https://doi.org/10.1039/c9ee00311h

Organometallic halide perovskites (OMHPs) have undergone a remarkable development as highly efficient optoelectronic materials for a variety of applications. To fully use the potential of OMHPs, several challenges must be overcome. One of these challenges is the understanding and control of their defect structures. The available data from research studies suggest that trap-assisted recombination exists in OMHPs despite their large carrier lifetimes and this has resulted in the perovskite boom over the last decade. Conventional spectroscopy faces serious obstacles in OMHPs due to their low defect concentrations and capture cross section. By using photo-Hall effect spectroscopy, we visualized the deep level defects responsible for non-radiative recombination and established their parameters in the MAPbBr3. The presented model in combination with Time of Flight measurements demonstrated that the electron transport is mostly affected by the trap-assisted recombination
Permanent Link: http://hdl.handle.net/11104/0306019