Towards a germanium and silicon laser: the history and the present

0521385 - FZÚ 2020 RIV CH eng J - Journal Article
Pelant, Ivan - Kůsová, Kateřina … Total 5 authors
Towards a germanium and silicon laser: the history and the present.
Crystals. Roč. 9, č. 12 (2019), s. 1-19, č. článku 624. ISSN 2073-4352. E-ISSN 2073-4352
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA18-05552S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : lasing * silicon * germanium * indirect band gap * light emission * nanostructures
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.404, year: 2019
Method of publishing: Open access

Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the beginning of the sixties. While in Ge the room-temperature lasing under electrical pumping has recently been achieved, in Si this objective remains still illusory. The necessity of applying a slightly different approach in Si as opposed to Ge is stressed. Recent advances in the field are discussed, based in particular on light-emitting Si quantum dots.
Permanent Link: http://hdl.handle.net/11104/0306016