Energy transfer channel between silicon nanocrystals and an optical center emitting above their bandgap

0521380 - FZÚ 2020 RIV NL eng J - Journal Article
Popelář, Tomáš - Ondič, Lukáš - Pelant, Ivan - Kůsová, Kateřina - Hiller, D.
Energy transfer channel between silicon nanocrystals and an optical center emitting above their bandgap.
Journal of Luminescence. Roč. 215, Nov (2019), s. 1-5, č. článku 116685. ISSN 0022-2313. E-ISSN 1872-7883
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA18-05552S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : silicon nanocrystals * NBOHC * time-resolved luminescence * doping * energy transfer
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.280, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jlumin.2019.116685

This paper reports on the observation of an electronic energy transfer channel between silicon nanocrystals and the SiO2 matrix they are embedded in. This energy transfer manifests itself by photoluminescence at 650 nm, i.e. above the indirect band gap, in superlattices formed by alternating layers of P- or B-doped as well as undoped silicon nanocrystals (NCs) and stoichiometric SiO2 or SiOxNy.
Permanent Link: http://hdl.handle.net/11104/0306014