Controlling the harmonic conversion efficiency in semiconductor superlattices by interface roughness design

0521044 - FZÚ 2020 RIV US eng J - Journal Article
Apostolakis, Apostolos - Pereira, Mauro Fernandes
Controlling the harmonic conversion efficiency in semiconductor superlattices by interface roughness design.
AIP Advances. Roč. 9, č. 1 (2019), s. 1-6, č. článku 015022. E-ISSN 2158-3226
R&D Projects: GA ČR GA19-03765S
Institutional support: RVO:68378271
Keywords : generation * terahertz * electrons * theory DMFT
OECD category: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impact factor: 1.337, year: 2019
Method of publishing: Open access

In semiconductor superlattices, when Bragg oscillating electrons interact with an input electromagnetic field, frequency multiplication is possible. An ideal superlattice has a purely antisymmetric voltage current response and can thus produce only odd harmonics. However, real world superlattices can also have even harmonic response and that increases the range of possible output frequencies. These effects have been recently explained with a predictive model that combines an Ansatz solution for the Boltzmann Equation with a Nonequilibrium Green's Functions approach. This predictive tool, coupled with recent progress on GHz input sources, support the growing interest in developing compact room temperature devices that can operate from the GHz to the THz range. The natural question to ask is what efficiencies can be expected.
Permanent Link: http://hdl.handle.net/11104/0305699