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Characterization of graphene oxide film by implantation of low energy copper ions

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    0520862 - ÚJF 2020 RIV NL eng J - Journal Article
    Cutroneo, Mariapompea - Torrisi, L. - Havránek, Vladimír - Macková, Anna - Malinský, Petr - Torrisi, Alfio - Stammers, James H. - Sofer, Z. - Silipigni, L. - Fazio, B. - Fazio, M. - Bottger, R.
    Characterization of graphene oxide film by implantation of low energy copper ions.
    Nuclear Instruments & Methods in Physics Research Section B. Roč. 460, č. 12 (2019), s. 169-174. ISSN 0168-583X. E-ISSN 1872-9584.
    [28th International Conference on Atomic Collisions in Solids (ICACS) / 10th International Symposium on Swift Heavy Ions in Matter (SHIM). Caen, 01.07.2018-07.07.2018]
    R&D Projects: GA MŠMT LM2015056; GA ČR GA16-05167S; GA MŠMT EF16_013/0001812
    Institutional support: RVO:61389005
    Keywords : low energy copper ions * ion implantation * composition graphene oxide
    OECD category: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
    Impact factor: 1.270, year: 2019
    Method of publishing: Limited access
    https://doi.org/10.1016/j.nimb.2019.03.021

    Graphene oxide (GO) is an electrical insulator as most of the carbon atoms in this material are spa-hybridized. Its physical, optical and chemical properties depend on the type and degree of reduction process. Presently, copper ion irradiation of GO foil has been performed at Ion Beam Center of the Helmholtz-Zentrum Dresden-Rossendorf to investigate the behavior of a set of GO foils under this irradiation at low energy and different fluences up to 5 x 10(16) ions/cm(2). The compositional and optical properties of graphene oxide have been studied as a function of the fluences of implanted copper ions in the wavelength range 400-1000 nm. The results of ellipsometry microscopy, helium Rutherford backscattering spectroscopy, elastic recoil detection analysis, Raman spectroscopy and SEM-EDX measurements will be presented and discussed.
    Permanent Link: http://hdl.handle.net/11104/0305518

     
     
Number of the records: 1  

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