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Structural and compositional modification of graphene oxide by means of medium and heavy ion implantation

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    0520686 - ÚJF 2020 RIV NL eng J - Journal Article
    Malinský, Petr - Cutroneo, Mariapompea - Sofer, Z. - Szokolova, K. - Bottger, R. - Akhmadaliev, S. - Macková, Anna
    Structural and compositional modification of graphene oxide by means of medium and heavy ion implantation.
    Nuclear Instruments & Methods in Physics Research Section B. Roč. 460, č. 12 (2019), s. 201-208. ISSN 0168-583X. E-ISSN 1872-9584.
    [28th International Conference on Atomic Collisions in Solids (ICACS) / 10th International Symposium on Swift Heavy Ions in Matter (SHIM). Caen, 01.07.2018-07.07.2018]
    R&D Projects: GA MŠMT LM2015056; GA ČR GA16-05167S; GA MŠMT EF16_013/0001812
    Institutional support: RVO:61389005
    Keywords : chemical properties * electrical properties * graphene oxide * ion irradiation
    OECD category: Nuclear related engineering
    Impact factor: 1.270, year: 2019
    Method of publishing: Limited access
    https://doi.org/10.1016/j.nimb.2019.03.022

    The ion irradiation fluences of 5.0 x 10(14) cm(-2), 5.0 x 10(15) cm(-2) and 5.0 x 10(16) cm(-2) were used. Upon irradiation, the modified GO foils were characterised using nuclear analytical methods Rutherford Backscattering Spectrometry (RBS), Elastic Recoil Detection Analysis (ERDA) and various conventional analytical methods such as Raman spectroscopy, Attenuated Total Reflectance Fourier Transform Infrared Spectroscopy (ATR-FTIR), X-ray Photoelectron Spectroscopy (XPS), and 2-point conductivity measurements. Oxygen species removal was evidenced as the increasing function of the ion implantation fluence and oxygen depth profiles exhibited complex behaviour connected to implanted ion specie. The deep oxygen depletion in the broad surface layer accompanied by Ga diffusion into the depth was observed in Ga irradiated GO compared to Au irradiated samples which exhibited a narrow oxygen depleted layer at GO surface. XPS evidenced strong increase of C=C bonds compared to C-O bonds on the irradiated GO surface with increasing ion fluence, which was comparable for both ion species. Raman spectroscopy shows the modification of main phonon modes identified in GO. The D peak slight decrease and broadening was observed for GO irradiated with ion fluence above 5 x 1015 cm(-2) and mainly for Au ion irradiation. FTIR analysis proved the oxygen containing functional group release with the increased ion fluence, mainly C-O group release after Au ion irradiation was observed. Simultaneously H-O stretching absorption peak is in FTIR spectrum reduced more significantly for Ga irradiated GO which is in accordance with RBS elemental analysis exhibiting the more pronounced hydrogen depletion. Electrical conductivity measurement shows the linear I-V characteristics for the GO irradiated using both ion species and all ion fluences, the surface layer exhibited conductive behaviour comparing to pristine GO non-linear I-V characteristics.
    Permanent Link: http://hdl.handle.net/11104/0305329

     
     
Number of the records: 1  

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