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A tool box to ascertain the nature of doping and photoresponse in single-walled carbon nanotubes

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    0517119 - ÚFCH JH 2020 RIV GB eng J - Journal Article
    Santidrian, Ana - Gonzalez-Dominguez, J. M. - Diez-Cabanes, V. - Hernandez-Ferrer, J. - Maser, W. K. - Benito, A. M. - Anson-Casaos, A. - Cornil, J. - Da Ros, T. - Kalbáč, Martin
    A tool box to ascertain the nature of doping and photoresponse in single-walled carbon nanotubes.
    Physical Chemistry Chemical Physics. Roč. 21, č. 7 (2019), s. 4063-4071. ISSN 1463-9076. E-ISSN 1463-9084
    R&D Projects: GA MŠMT(CZ) LTC18039; GA MŠMT(CZ) EF16_013/0001821; GA MŠMT(CZ) LM2015073
    EU Projects: European Commission(XE) 734834; European Commission(XE) 642742; European Commission(XE) 642196
    Institutional support: RVO:61388955
    Keywords : electronic-structure * photocurrent generation * ab-initio * chemistry * diazonium * modes * photoluminescence * transport * graphene * defects
    OECD category: Physical chemistry
    Impact factor: 3.430, year: 2019
    Method of publishing: Open access

    The effect of doping on the electronic properties in bulk single-walled carbon nanotube (SWCNT) samples is studied for the first time using a new in situ Raman spectroelectrochemical method, and further verified by DFT calculations and photoresponse. We use p-/n-doped SWCNTs prepared by diazonium reactions as a versatile chemical strategy to control the SWCNT behavior. The measured and calculated data testify an acceptor effect of 4-aminobenzenesulfonic acid (p-doping), and a donor effect (n-doping) in the case of benzyl alcohol. In addition, pristine and covalently functionalized SWCNTs were used for the preparation of photoactive film electrodes. The photocathodic current in the photoelectrochemical cell is consistently modulated by the doping group. These results validate the in situ Raman spectroelectrochemistry as a unique tool box for predicting the electronic properties of functionalized SWCNTs in the form of thin films and their operational functionality in thin film devices for future optoelectronic applications.
    Permanent Link: http://hdl.handle.net/11104/0302409

     
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