Passivating contacts for silicon solar cells with 800 °C stability based on tunnel-oxide and highly crystalline thin silicon layer

0511318 - FZÚ 2020 RIV US eng C - Conference Paper (international conference)
Stuckelberger, J. - Nogay, G. - Wyss, P. - Lehmann, M. - Allebé, C. - Debrot, F. - Ledinský, Martin - Fejfar, Antonín - Despeisse, M. - Haug, F.J. - Löper, P. - Ballif, C.
Passivating contacts for silicon solar cells with 800 °C stability based on tunnel-oxide and highly crystalline thin silicon layer.
IEEE Photovoltaic Specialists Conference (PVSC 2016) /43./. New York: IEEE, 2016, s. 2518-2521. ISBN 978-1-5090-2724-8. ISSN 0160-8371.
[IEEE Photovoltaic Specialists Conference (PVSC 2016) /43./. Portland (US), 05.06.2016-10.06.2016]
R&D Projects: GA MŠMT LM2015087
Institutional support: RVO:68378271
Keywords : silicon wafers * solar cells * crystalline layers
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

Passivating contacts based on nanostructured highly crystalline thin silicon layers are presented. The contact layer stack is optimized towards full crystallinity targeting high transparency. We present an optimization of an electron selective contact and demonstrate excellent surface passivation on n-type and also p-type wafers with such highly crystalline layers. On n-type wafers, the electron selective contact attains an implied open-circuit voltage of 718 mV at an annealing temperature of 925 degrees C. For p-type wafers we find optimum conditions between 850 degrees C and 900 degrees C attaining an implied open-circuit voltage of 723 mV. First tests with hole-selective contacts have yielded an implied open-circuit voltage of up to 676 mV after thermal annealing at 800 degrees C.
Permanent Link: http://hdl.handle.net/11104/0301618