Electric-field-tuned topological phase transition in ultrathin Na.sub.3./sub.Bi

0511237 - FZÚ 2020 RIV GB eng J - Journal Article
Collins, J.L. - Tadich, A. - Wu, W. - Gomes, L.C. - Rodrigues, J.N.B. - Liu, C. - Hellerstedt, Jack - Ryu, H. - Tang, S.J. - Mo, S.-K. - Adam, S. - Yang, S.Y.A. - Fuhrer, M.S. - Edmonds, M. T.
Electric-field-tuned topological phase transition in ultrathin Na₃Bi.
Nature. Roč. 564, č. 7736 (2018), s. 390-394. ISSN 0028-0836. E-ISSN 1476-4687
Institutional support: RVO:68378271
Keywords : apparent barrier height * dirac semimetal * thin films * quantum spin Hall phases * quantum phase transition * state
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 43.070, year: 2018
Method of publishing: Limited access
https://doi.org/10.1038/s41586-018-0788-5

The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor 1–4 . In this scheme, ‘on’ is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator 5–9 , and ‘off ’ is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits 4 , which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far.

Permanent Link: http://hdl.handle.net/11104/0301564