Synthesis of Si-NWs by PECVD using Sn as catalyst on TCO thin film for optoelectronic devicies

0511234 - FZÚ 2020 RIV GB eng J - Journal Article
Pham, T.T. - Le, V.T.H. - Cu, S.T. - Stuchlík, Jiří
Synthesis of Si-NWs by PECVD using Sn as catalyst on TCO thin film for optoelectronic devicies.
Advances in Natural Sciences-Nanoscience and Nanotechnology. Roč. 5, č. 4 (2014), s. 1-8, č. článku 045011. ISSN 2043-6254
R&D Projects: GA MŠMT(CZ) 7AMB14ATE004; GA MŠMT(CZ) LD14011; GA MŠMT LH12236
Grant - others:AVČR(CZ) M100101216
Institutional support: RVO:68378271
Keywords : electrical-properties * growth * silicon nanowires (Si-NWs) * PECVD * ZnO * VLS process * Sn nanoparticles
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Method of publishing: Open access

In this paper we focus on silicon nanowires (Si-NWs) which were fabricated on transparent conductive substrates (TCO) by plasma-enhanced chemical vapor deposition (PECVD) method using Sn as stimulated catalyst metal. TCO which we used are ZnO fabricated by direct current (dc) sputtering. Property of ZnO thin film was investigated by x-ray diffraction (XRD), volt-ohm-miliampere (VOM) meter, and Stylus method. In order to grow Si-NWs using PECVD we need to use Sn as catalyst to synthesize Si-NWs. Sn nanoparticles were fabricated by high vacuum evaporation system with SenVac thin film controller. Size and density of nanoparticles (NPs) were investigated by scanning electron microscope (SEM). The influence of the thickness and forming Sn NPs was studied. In particular, the factors affecting the formation of Si-NWs such as temperature and rate of gas were examined. Si-NWs' properties were investigated by SEM, Raman spectroscopy and energy dispersive x-ray (EDX) spectrocopy

Permanent Link: http://hdl.handle.net/11104/0301556