Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

0506256 - ÚFM 2020 RIV US eng J - Journal Article
Lee, Lok Y. - Frentrup, M. - Vacek, Petr - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM.
Journal of Applied Physics. Roč. 125, č. 10 (2019), č. článku 105303. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT(CZ) EF16_027/0008056; GA MŠMT(CZ) LQ1601
Institutional support: RVO:68081723
Keywords : Epilayers * Gallium nitride * High resolution transmission electron microscopy * III-V semiconductors * Silicon carbide * Stacking faults * X ray diffraction * Zinc sulfide
OECD category: Electrical and electronic engineering
Impact factor: 2.286, year: 2019
Method of publishing: Open access
http://orca.cf.ac.uk/120129/1/Wallis%20D%20-%20Investigation%20of%20stacking%20faults%20in%20MOVPE-grown%20....pdf

X-ray diffraction and bright-field transmission electron microscopy are used to investigate the distribution and density of {111}-type stacking faults (SFs) present in a heteroepitaxial zincblende GaN epilayer with high phase purity, grown on a 3C-SiC/Si (001) substrate by metalorganic vapour-phase epitaxy. It is found that the 4 degrees miscut towards the [110] direction of the substrate, which prevents the formation of undesirable antiphase domains, has a profound effect on the relative densities of SFs occurring on the different {111} planes. The two orientations of SFs in the [-110] zone, where the SF inclination angle with the GaN/SiC interface is altered by the 4 miscut, show a significant difference in density, with the steeper (111) SFs being more numerous than the shallower (-1-11) SFs by a factor of similar to 5 at 380 nm from the GaN/SiC interface. In contrast, the two orientations of SFs in the [110] zone, which is unaffected by the miscut, have densities comparable with the (-1-11) SFs in the [-110] zone. A simple model, simulating the propagation and annihilation of SFs in zincblende GaN epilayers, reproduces the presence of local SF bunches observed in TEM data. The model also verifies that a difference in the starting density at the GaN/SiC interface of the two orientations of intersecting {111} SFs in the same zone reduces the efficiency of SF annihilation. Hence, (111) SFs have a higher density compared with SFs on the other three {111} planes, due to their preferential formation at the GaN/SiC interface caused by the miscut.
Permanent Link: http://hdl.handle.net/11104/0300842