Carbide-free one-zone sulfurization method grows thin MoS.sub.2./sub. layers on polycrystalline CVD diamond

0504730 - FZÚ 2020 RIV GB eng J - Journal Article
Sojkova, M. - Šiffalovič, P. - Babchenko, O. - Vanko, G. - Dobročka, E. - Hagara, J. - Mrkyvkova, N. - Majková, E. - Ižák, Tibor - Kromka, Alexander - Hulman, M.
Carbide-free one-zone sulfurization method grows thin MoS₂ layers on polycrystalline CVD diamond.
Scientific Reports. Roč. 9, Feb (2019), s. 1-11, č. článku 2001. ISSN 2045-2322. E-ISSN 2045-2322
R&D Projects: GA ČR(CZ) GBP108/12/G108
Institutional support: RVO:68378271
Keywords : diamond * MoS₂ * sulfurization * GIWAXS * XRD * AFM
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.998, year: 2019
Method of publishing: Open access

Here, we report on the fabrication of few-layer molybdenum disulfide films on the top of thin diamond substrates using a simplified sulfurization of a pre-deposited molybdenum coating. The as-prepared layers were characterized by a number of techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We observed that the sulfurization process had no impact on the diamond substrates and, in particular, none molybdenum carbide layer was formed at the interface between the Mo film and diamond substrate. We found out that the initial thickness of the Mo film determined the crystallographic orientation of the c-axis of the as-grown MoS2 layer. This enables a controlled growth of the MoS2 layers with a tailored crystallographic orientation for particular applications, such as solar cells, water splitting or water disinfection.
Permanent Link: http://hdl.handle.net/11104/0296313