Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

0502820 - FZÚ 2019 RIV GB eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Jarý, Vítězslav - Dominec, Filip - Slavická Zíková, Markéta - Hájek, František - Hulicius, Eduard - Vetushka, Aliaksi - Ledoux, G. - Dujardin, C. - Nikl, Martin
Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs.
CrystEngComm. Roč. 21, č. 2 (2019), s. 356-362. ISSN 1466-8033
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : InGaN * MOVPE * QW number
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.117, year: 2019
Method of publishing: Open access with time embargo

InGaN/GaN multiple quantum well structures are studied as potential candidates for superfast scintillation detectors and show the leading decay time of around 1 ns and intense luminescence. Photoluminescence properties of these structures with quantum well numbers ranging from 10 to 60 are described. It is shown that with increased QW number, the luminescence efficiency of the whole structure increases due to the V-pits of a sufficient size suppressing non-radiative recombination. Suppression of the non-radiative recombination near dislocations is demonstrated by the cathodoluminescence measurement. The optimal V-pit size is found to be in the range from 200 to 300 nm, which is obtained for structures with 40 QWs. On the other hand, when the V-pit size exceeds the optimal value, the PL intensity decreases by strong V-pit coalescence, which is observed for structures with 60 QWs. For further increasing the active region thickness it is necessary to find a way to control the V-pit size.

Permanent Link: http://hdl.handle.net/11104/0294704