At the gates: the tantalum-rich phase Hf.sub.3./sub.Ta.sub.2./sub.O.sub.11./sub. and its commensurately modulated structure

0502082 - FZÚ 2019 RIV US eng J - Journal Article
Wiedemann, D. - Luedtke, T. - Palatinus, Lukáš - Willinger, E. - Willinger, M.G. - Muehlbauer, M.J. - Lerch, M.
At the gates: the tantalum-rich phase Hf₃Ta₂O₁₁ and its commensurately modulated structure.
Inorganic Chemistry. Roč. 57, č. 22 (2018), s. 14435-14442. ISSN 0020-1669. E-ISSN 1520-510X
Institutional support: RVO:68378271
Keywords : field-effect transistors * hafnium tantalum oxides * crystal-structure * electron microscopy * X-ray diffraction
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.850, year: 2018

Generic mixtures in the system (Zr,Hf)O2− (Nb,Ta)2O5 are employed as tunable gate materials for fieldeffect transistors. Whereas production processes and target compositions are well-defined, resulting crystal structures are vastly unexplored. In this study, we summarize the sparse reported findings and present the new phase Hf3Ta2O11 as synthesized via a sol−gel route. Its commensurately modulated structure represents the hitherto unknown, metal(V)-richest member of the family (Zr,Hf)x(Nb,Ta)2OO2x+5.

Permanent Link: http://hdl.handle.net/11104/0294028