MAPS sensor for radiation imaging designed in 180 nm SOI CMOS technology

0501816 - FZÚ 2019 RIV GB eng J - Journal Article
Havránek, M. - Benka, T. - Hejtmanek, M. - Janoška, Z. - Kafka, Z. - Kopeček, Jaromír - Kuklová, M. - Marčišovská, M. - Marcisovský, M. - Neue, G. - Svihra, P. - Tomášek, L. - Vančura, P. - Vrba, V.
MAPS sensor for radiation imaging designed in 180 nm SOI CMOS technology.
Journal of Instrumentation. Roč. 13, č. 6 (2018), s. 1-10, č. článku C06004. ISSN 1748-0221. E-ISSN 1748-0221
R&D Projects: GA MŠMT LM2015058
Institutional support: RVO:68378271
Keywords : active pixel sensor * X-ray detectors
OECD category: Nuclear physics
Impact factor: 1.366, year: 2018

In thiswork, we present a prototype of the MonolithicActive Pixel Sensor (MAPS) called X-CHIP-02 designed in 180 nm SOI CMOS technology. The selected technology has attractive features for fabrication of X-ray imaging sensors: 100 Omega.cm handle wafer resistivity, thick epitaxial layer to suppress back-gate effect, support of high voltage devices and deep trench isolation. X-CHIP-02 has two pixel matrices with the pixel pitch of 50 mu m and 100 mu m with integrated 8-bit photon counting circuitry. Fine pitch SOI monolithic pixels imply small capacitance and thus small electronic noise of approximate to 50 e(-). Design of the sensor chip and basic radiation imaging capabilities are described in this paper.
Permanent Link: http://hdl.handle.net/11104/0293800