Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments

0499514 - FZÚ 2019 RIV UA eng J - Journal Article
Savchenko, Dariia - Kalabukhova, E.N. - Shanina, B.D. - Bagraev, N.T. - Klyachkin, L.E. - Malyarenko, A.M. - Khromov, V. S.
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments.
Semiconductor Physics Quantum Electronics & Optoelectronics. Roč. 21, č. 3 (2018), s. 249-255. ISSN 1560-8034. E-ISSN 1605-6582
R&D Projects: GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088
Institutional support: RVO:68378271
Keywords : cyclotron resonance * EPR * effective mass * relaxation time * silicon nanostructure
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

We present the experimental and theoretical results of analysis of the opticallyinduced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. The obtained value of the transversal mass is higher than that reported for bulk Si. The prolongation of the transport time for photo-excited electrons and holes can be explained by the spatial separation of electrons and holes in the field of the p+-n junction as well as by reduction of the scattering process due to the presence of boron dipole centers.
Permanent Link: http://hdl.handle.net/11104/0291703