Influence of gallium content on Ga.sup.3+./sup. position and photo- and thermally stimulated luminescence in Ce.sup.3+./sup.- doped multicomponent (Y,Lu,).sub.3./sub.Ga.sub.x./sub.Al.sub.5-x./sub.O.sub.12./sub. garnets

0499480 - FZÚ 2019 RIV NL eng J - Journal Article
Babin, Vladimir - Buryi, Maksym - Chlan, V. - Fomichov, Y. - Kamada, K. - Laguta, Valentyn - Nikl, Martin - Pejchal, Jan - Štěpánková, H. - Yoshikawa, A. - Zagorodniy, Y. - Zazubovich, S.
Influence of gallium content on Ga³⁺ position and photo- and thermally stimulated luminescence in Ce³⁺- doped multicomponent (Y,Lu,)₃Ga_xAl_5-xO₁₂ garnets.
Journal of Luminescence. Roč. 200, Aug (2018), s. 141-150. ISSN 0022-2313. E-ISSN 1872-7883
R&D Projects: GA ČR GA17-09933S
Institutional support: RVO:68378271
Keywords : luminescence * NMR * EPR * Ga³⁺ * multicomponent garnets * scintillators
OECD category: Optics (including laser optics and quantum optics)
Impact factor: 2.961, year: 2018

Photoluminescence, thermally stimulated luminescence (TSL) and EPR characteristics of the Ce3+-doped single crystals of multicomponent Y1Lu2GaxAl5-xO12 and Lu3GaxAl5-xO12 garnets with different Ga contents (x=0, 1, 2, 3, 4, 5) excited in the Ce3+-related absorption bands are investigated in the range 9-500 K. The distribution of Ga3+ and Al3+ ions in the crystal lattice is determined by the NMR. The relative number of Ga3+ ions, the maxima positions of the TSL peaks and the corresponding trap depths decrease linearly with the increasing Ga content. At the same time, the reduction of the activation energy Ea of the TSL peaks creation under irradiation in the 4f–5d1 absorption band of Ce3+ is strongly nonlinear. To explain this, the suggestion is made that Ea is the energy distance between the excited 5d1 level of Ce3+ and a defect level located between the 5d1 level and the bottom of the conduction band and arising from the Ga3+ ion perturbed by the nearest neighboring Ce3+ ion.
Permanent Link: http://hdl.handle.net/11104/0291834