Laser system for measuring MEMS relief created by the method of deep reactive ion etching

0498736 - ÚPT 2019 RIV US eng C - Conference Paper (international conference)
Maňka, Tadeáš - Šerý, Mojmír - Krátký, Stanislav - Zemánek, Pavel
Laser system for measuring MEMS relief created by the method of deep reactive ion etching.
21st Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics. (Proceedings of SPIE 10976). Bellingham: SPIE, 2018 - (Zemánek, P.), č. článku 109760M. ISBN 9781510626072. ISSN 0277-786X.
[Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics /21./. Lednice (CZ), 03.09.2018-07.09.2018]
R&D Projects: GA MŠMT(CZ) LO1212; GA MŠMT ED0017/01/01
Institutional support: RVO:68081731
Keywords : laser interferometry * DRIE * MEMS * depth measuring
OECD category: Optics (including laser optics and quantum optics)

The method of laser interferometry is presented appropriate for precise determination of the depth of etching in a deepreactive ion etching system (DRIE), primarily used for the manufacturing of micro-electro-mechanical systems (MEMS). The system uses previous interferometer designs developed at the Institute of Institute of Scientific Instruments of the CAS, v. v. i. (ISI). We designed and manufactured a measurement system for specific MEMS and its functionality verified with the KLATencor D-120 profilometer.
Permanent Link: http://hdl.handle.net/11104/0291094