Germanium and silicon/germanium nanoparticles encapsulated in amorphous silicon matrix for photovoltaic applications

0498074 - FZÚ 2019 JP eng A - Abstract
Stuchlík, Jiří - Fajgar, Radek - Kupčík, Jaroslav - Remeš, Zdeněk - Stuchlíková, The-Ha - Oswald, Jiří - Shklyaev, A.A. - Volodin, V.A.
Germanium and silicon/germanium nanoparticles encapsulated in amorphous silicon matrix for photovoltaic applications.
Book of Abstracts - Grand Renewable Energy - International Conference and Exhibition 2018. Tokyo, 2018. P-Pv-2-21.
[Grand Renewable Energy - International Conference and Exhibition 2018. 17.06.2018-22.06.2018, Yokohama]
R&D Projects: GA MŠMT(CZ) LTC17029
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : Si:H * PECVD * Sn NPs * laser ablation * MBE * Ge NPs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Chemical process engineering (UCHP-M)

Thin films prepared by deposition of nanoparticles on the silicon surface were studied with aim to optimize properties for optoelectronic applications. The nanoparticles were prepared by ArF Laser Ablation and MBE resp. high vacuum evaporation. Broad range of deposition conditions (e.g. precursor pressure, temperature and laser fluence) was studied. Interesting and utilizable optoelectronic properties were observed at multilayered films composed of Germanium nanoparticles (NPs). The Ge NPs were deposited immediately after deposition of the amorphous silicon layer by Plasma Enhanced CVD without exposing the underlying layer to ambient air in the case of Laser Ablation. In the case of MBE the Ge NPs were deposited ex situ, but after previous deposition of amorphous silicon. The deposited material was characterized by means of Raman, photoelectron and transmission spectroscopy and AFM.

Permanent Link: http://hdl.handle.net/11104/0290494