Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing

0492476 - ÚJF 2019 RIV CH eng J - Journal Article
Cajzl, J. - Nekvindová, P. - Macková, Anna - Malinský, Petr - Oswald, Jiří - Remeš, Zdeněk - Varga, Marián - Kromka, Alexander - Akhetova, B. - Bottger, R. - Prajzler, V.
Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing.
Micromachines. Roč. 9, č. 7 (2018), č. článku 316. E-ISSN 2072-666X
R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠMT LM2015056
Institutional support: RVO:68378271 ; RVO:61389005
Keywords : nano-crystalline diamond * erbium * ion implantation * luminescence * Rutherford Backscattering Spectrometry * Raman spectroscopy * thin films
OECD category: Nano-materials (production and properties); Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D)
Impact factor: 2.426, year: 2018

We present a fundamental study of the erbium luminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at fluences up to 5 x 10(15) ions.cm(-2), followed by annealing at controllable temperature in Ar atmosphere or vacuum to enhance the near infrared photoluminescence. The Rutherford Backscattering Spectrometry showed that Er concentration maximum determined for NCD films is slightly shifted to the depth with respect to the Stopping and Range of Ions in Matter simulation. The number of the displaced atoms per depth slightly increased with the fluence, but in fact the maximum reached the fully disordered target even in the lowest ion fluence used. The post-implantation annealing at 800 degrees C in vacuum had a further beneficial effect on erbium luminescence intensity at around 1.5 mu m, especially for the Er-doped NCD films, which contain a higher amount of grain boundaries than single-crystalline diamond.
Permanent Link: http://hdl.handle.net/11104/0285996